Abstract: Challenges in achieving high-quality 2D semiconducting devices for low-temperature quantum transport studies are sought to be overcome by the proposed approach, which involves the utilization of sulfur-defects/vacancies in 2D transition metal dichalcogenides (2DTMDs) with thiol linkers as protective seed layers. Through this approach, dielectric materials can be deposited, resulting in the creation of an ultra-smooth interface. Defects are minimized and high quality is ensured, surpassing the limitations of conventional methods. The advancement of 2D semiconductor electronics and quantum technologies is potentially facilitated by this method, as it enables the fabrication of defect-free devices suitable for low-temperature quantum transport studies.

Meeting ID: 939 5137 1577
Passcode: 762235